AXT,INC. (NASDAQ:AXTI) Files An 8-K Results of Operations and Financial Condition
Item 2.02 Results of Operations and Financial Condition
On January 14, 2019, AXT,Inc. issued a press release announcing its preliminary revenue for the quarter endedDecember 31, 2018. A copy of the Company’s press release, announcing the preliminary revenue, is attached hereto as Exhibit99.1 and incorporated herein by reference.
The information in Exhibit99.1 hereto discussing the Company’s results of operations and financial condition for thequarter endedSeptember 30, 2018, is being “furnished” in accordance with General Instruction B.2 of Form8‑K and shall not be deemed to be “filed” for purposes of Section18 of the Securities Exchange Act of 1934, as amended (the “Exchange Act”), or otherwise subject to the liabilities of that section, or Sections 11 and 12(a)(2)of the Securities Act of 1933, as amended. The information contained herein and in the accompanying exhibit shall not be incorporated by reference into any filing of the Registrant, whether made before or after the date hereof, regardless of any general incorporation language in such filing, unless expressly incorporated by specific reference to such filing.
Item 2.02 Financial Statements and Exhibits
99.1Press release dated April 14, 2019, regarding the preliminary revenue of AXT,Inc. for thequarter endedDecember 31, 2018.
AXT INC Exhibit
EX-99.1 2 axti-20190114ex991f0cd45.htm EX-99.1 axti_Ex99_1 Exhibit 99.1 AXT,…
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About AXT,INC. (NASDAQ:AXTI)
AXT, Inc. (AXT) is a developer and producer of compound and single element semiconductor substrates, also known as wafers. The dominant substrates used in producing semiconductor chips and other electronic circuits are made from silicon. The Company is engaged in the design, development, manufacture and distribution of compound semiconductor substrates and sale of materials. The Company provides alternative or specialty materials in the form of substrates or wafers, including compound and single element substrates. Its compound substrates combine indium with phosphorous (InP) or gallium with arsenic (GaAs). Its single element substrates are made from germanium (Ge). The Company uses its Vertical Gradient Freeze (VGF) technique for growing single crystal Indium Phosphide (InP), Gallium Arsenide (GaAs) and Germanium (Ge) ingots used to produce wafers for diverse electronic and optoelectronic device and circuit applications.